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Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations

Ke Xu Shiyu Tang Changqing Guo Yu Song Houbing Huang

无机材料学学报（英文）2025，Vol.11Issue(3)：10-18,9.

无机材料学学报（英文）2025，Vol.11Issue(3)：10-18,9.DOI:10.1016/j.jmat.2024.04.016

Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations

Ke Xu ¹Shiyu Tang ¹Changqing Guo ¹Yu Song ¹Houbing Huang¹

作者信息

1. School of Materials Science and Engineering,Beijing Institute of Technology,Beijing,100081,China||Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing,100081,China
折叠

摘要

关键词

Antiferroelectric materials/Phase-field simulations/Strain effect/Defect dipoles/Energy storage property

Key words

Antiferroelectric materials/Phase-field simulations/Strain effect/Defect dipoles/Energy storage property

引用本文复制引用

Ke Xu,Shiyu Tang,Changqing Guo,Yu Song,Houbing Huang..Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations[J].无机材料学学报（英文）,2025,11(3):10-18,9.

基金项目

This work was supported financially by the National Natural Science Foundation of China(Grant No.52372100)and the National Key Research and Development Program of China(Grant No.2019YFA0307900). （Grant No.52372100）

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