首页|期刊导航|无机材料学学报（英文）|Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Han Sol Park Cheol Seong Hwang Joong Chan Shin Kyung Do Kim Seong Jae Shin Jae Hee Song Seung Kyu Ryoo In Soo Lee Suk Hyun Lee Hyunwoo Nam

无机材料学学报（英文）2025，Vol.11Issue(6)：122-132,11.

无机材料学学报（英文）2025，Vol.11Issue(6)：122-132,11.DOI:10.1016/j.jmat.2025.101109

Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Han Sol Park ¹Cheol Seong Hwang ¹Joong Chan Shin ¹Kyung Do Kim ¹Seong Jae Shin ¹Jae Hee Song ¹Seung Kyu Ryoo ¹In Soo Lee ¹Suk Hyun Lee ¹Hyunwoo Nam¹

作者信息

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center,College of Engineering,Seoul National University,Gwanak-ro 1,Gwanak-gu,Seoul,08826,Republic of Korea
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摘要

关键词

Ferroelectric/Hf0.5Zr0.5O2/Coefficient of thermal expansion/Tensile stress/Bi-layer bottom electrode

Key words

Ferroelectric/Hf0.5Zr0.5O2/Coefficient of thermal expansion/Tensile stress/Bi-layer bottom electrode

引用本文复制引用

Han Sol Park,Cheol Seong Hwang,Joong Chan Shin,Kyung Do Kim,Seong Jae Shin,Jae Hee Song,Seung Kyu Ryoo,In Soo Lee,Suk Hyun Lee,Hyunwoo Nam..Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes[J].无机材料学学报（英文）,2025,11(6):122-132,11.

基金项目

This work was supported by the National Research Foundation of Korea(Grant No.2020R1A3B2079882). （Grant No.2020R1A3B2079882）

无机材料学学报（英文）

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