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Crystal,ferromagnetism,and magnetoresistance with sign reversal in a EuAgP semiconductor

Qian Zhao Kaitong Sun Si Wu Hai-Feng Li

无机材料学学报（英文）2025，Vol.11Issue(1)：28-35,8.

无机材料学学报（英文）2025，Vol.11Issue(1)：28-35,8.DOI:10.1016/j.jmat.2024.02.012

Crystal,ferromagnetism,and magnetoresistance with sign reversal in a EuAgP semiconductor

Qian Zhao ¹Kaitong Sun ¹Si Wu ²Hai-Feng Li¹

作者信息

1. Institute of Applied Physics and Materials Engineering,University of Macau,Avenida da Universidade,Taipa,Macao SAR,999078,China
2. School of Physical Science and Technology,Ningbo University,Ningbo,315211,Zhejiang,China
折叠

摘要

关键词

Ferromagnetic semiconductor/EuAgP/Magnetoresistance/Magnetization/Heat capacity

Key words

Ferromagnetic semiconductor/EuAgP/Magnetoresistance/Magnetization/Heat capacity

引用本文复制引用

Qian Zhao,Kaitong Sun,Si Wu,Hai-Feng Li..Crystal,ferromagnetism,and magnetoresistance with sign reversal in a EuAgP semiconductor[J].无机材料学学报（英文）,2025,11(1):28-35,8.

基金项目

This work was supported by the Science and Technology Development Fund,Macao SAR(File Nos.0090/2021/A2 and 0049/2021/AGJ),University of Macau(MYRG2020-00278-IAPME),and the Guangdong-Hong Kong-Macao Joint Laboratory for Neutron Scattering Science and Technology(Grant No.2019B121205003). （File Nos.0090/2021/A2 and 0049/2021/AGJ）

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