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Defect engineering and alloying strategies for tailoring thermoelectric behavior in GeTe and its alloys

Qiyong Chen Cheng Yang Tong Xing Jinyang Xi Wenqing Zhang Jiong Yang Lili Xi

无机材料学学报（英文）2025，Vol.11Issue(1)：36-43,8.

无机材料学学报（英文）2025，Vol.11Issue(1)：36-43,8.DOI:10.1016/j.jmat.2024.01.007

Defect engineering and alloying strategies for tailoring thermoelectric behavior in GeTe and its alloys

Qiyong Chen ¹Cheng Yang ¹Tong Xing ²Jinyang Xi ¹Wenqing Zhang ³Jiong Yang ¹Lili Xi¹

作者信息

1. Materials Genome Institute,Shanghai University,Shanghai,200444,China
2. Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai,200050,China
3. Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
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摘要

关键词

GeTe-Based thermoelectric material/Intrinsic and extrinsic defect/Band alignment

Key words

GeTe-Based thermoelectric material/Intrinsic and extrinsic defect/Band alignment

引用本文复制引用

Qiyong Chen,Cheng Yang,Tong Xing,Jinyang Xi,Wenqing Zhang,Jiong Yang,Lili Xi..Defect engineering and alloying strategies for tailoring thermoelectric behavior in GeTe and its alloys[J].无机材料学学报（英文）,2025,11(1):36-43,8.

基金项目

This work was supported by the Natural Science Foundation of China(Grant Nos.52172216 and 92163212),the National Key Research and Development Program of China(No.2021YFB3502200),Shanghai Engineering Research Center for In-tegrated Circuits and Advanced Display Materials,Shanghai Tech-nical Service Center of Science and Engineering Computing,Shanghai University,and Hefei Advanced Computing Center. （Grant Nos.52172216 and 92163212）

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