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Efficient anomalous valley Hall effect switching in antiferrovalley MnSe driven by magnetoelectric coupling

Yaping Wang Xinguang Xu Weixiao Ji Wei Sun Shengshi Li Yanlu Li Xian Zhao

无机材料学学报（英文）2025，Vol.11Issue(1)：57-64,8.

无机材料学学报（英文）2025，Vol.11Issue(1)：57-64,8.DOI:10.1016/j.jmat.2024.01.010

Efficient anomalous valley Hall effect switching in antiferrovalley MnSe driven by magnetoelectric coupling

Yaping Wang ¹Xinguang Xu ¹Weixiao Ji ²Wei Sun ³Shengshi Li ²Yanlu Li ¹Xian Zhao⁴

作者信息

1. State Key Lab of Crystal Materials and Institute of Crystal Materials,Shandong University,Jinan,250100,China
2. Spintronics Institute,University of Jinan,Jinan,250022,China
3. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials,University of Jinan,Jinan,250022,China
4. Center for Optics Research and Engineering of Shandong University,Shandong University,Qingdao,266237,China
折叠

摘要

关键词

Anomalous valley Hall effect/Valley polarization/vdW heterostructure/Magnetoelectric coupling

Key words

Anomalous valley Hall effect/Valley polarization/vdW heterostructure/Magnetoelectric coupling

引用本文复制引用

Yaping Wang,Xinguang Xu,Weixiao Ji,Wei Sun,Shengshi Li,Yanlu Li,Xian Zhao..Efficient anomalous valley Hall effect switching in antiferrovalley MnSe driven by magnetoelectric coupling[J].无机材料学学报（英文）,2025,11(1):57-64,8.

基金项目

This work was supported by the National Natural Science Foundation of China(Grant No.12004137),the Taishan Scholar Program of Shandong Province(Grant No.ts20190939),the Natural Science Foundation of Shandong Province(Grant No.ZR2020QA052)and the Qilu Young Scholar of Shandong University. （Grant No.12004137）

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