太赫兹科学与电子信息学报2025，Vol.23Issue(11)：1119-1124,6.DOI:10.11805/TKYDA2024507
共振隧穿二极管材料结构设计
Structural design of Resonant Tunneling Diodes materials
摘要
Abstract
Resonant Tunneling Diodes(RTDs)have become a promising candidate for terahertz(THz)radiation sources due to their unique negative differential resistance and compact structure.Optimizing the material structure is crucial for further improving the power performance of RTD-based THz sources and thereby advancing the application and development of THz technology.In this study,using a two-dimensional device simulation method,the influence of key structural parameters—such as the thicknesses of the spacer,barrier,and well layers—in AlAs/InGaAs RTD epitaxial materials on their static current-voltage(I-U)characteristics is systematically investigated.The optimal parameter ranges for enhancing device performance are identified,and their relationship with the maximum available RF output power Pmax of RTD-based THz sources is analyzed.The results show that the Peak-to-Valley Current Ratio(PVCR)of the designed device is improved from 2.22 to 3.75,and the output power Pmax reaches 3.52 times that of previous devices,achieving significant performance optimization.关键词
共振隧穿二极管/AlAs/InGaAs异质结/隔离层/势垒/势阱Key words
Resonant Tunneling Diodes(RTD)/AlAs/InGaAs heterojunction/spacer/barrier/well分类
信息技术与安全科学引用本文复制引用
刘博文,刘军,宋瑞良,刘宁..共振隧穿二极管材料结构设计[J].太赫兹科学与电子信息学报,2025,23(11):1119-1124,6.基金项目
国家重点研发计划资助项目(2021YFB2800700) （2021YFB2800700）
