中国光学（中英文）2025，Vol.18Issue(6)：1277-1288,12.DOI:10.37188/CO.2025-0090
纳秒脉冲激光对背照式CMOS探测器组件损伤机理研究
Investigation of laser-induced damage mechanisms in back-illuminated CMOS detector modules under nanosecond pulsed irradiation
摘要
Abstract
To evaluate the laser-induced damage effects on visible-light imaging systems under realistic oper-ational conditions,a detector module comprising a filter and a back-illuminated CMOS sensor was employed as the target.This study investigates the damage mechanisms induced by nanosecond pulsed lasers at wavelengths of 532 nm and 1064 nm.Initially,typical damage effect data of CMOS components caused by 532-nm and 1064-nm nanosecond pulsed lasers are obtained through a series of experiments.To address the limitations in observing internal thermal and mechanical responses during the experiments,a finite element simulation model was developed to analyze the interaction between the laser and the detector.The simula-tion enabled visualization of temperature and stress concentration phenomena that are difficult to capture through direct observation,thus providing valuable reference data for damage thresholds.The results from both the experiments and simulations indicate that the dominant damage mechanism is coupled thermo-mech-anical failure.The measured multi-stage damage thresholds were 30.06 mJ/cm2,38.93 mJ/cm2,56.20 mJ/cm2,and 102.17 mJ/cm2 for 532 nm laser irradiation,and 38.62 mJ/cm2,50.09 mJ/cm2,116.31 mJ/cm2,and 137.73 mJ/cm2 for 1064 nm irradiation.关键词
背照式COMS探测器/纳秒脉冲激光/激光辐照效应/损伤机理Key words
back-illuminated CMOS detector/nanosecond pulsed laser/laser irradiation effects/damage mechanism分类
军事科技引用本文复制引用
王柯,刘扬,王云哲,张引,王振州,邵俊峰..纳秒脉冲激光对背照式CMOS探测器组件损伤机理研究[J].中国光学（中英文）,2025,18(6):1277-1288,12.基金项目
国家自然科学基金青年基金(No.12304286)Supported by National Natural Science Foundation for Distinguished Young Scholars of China(No.12304286) （No.12304286）
