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A high reliability NOR flash cell in 50 nm node technology

Kevin Fang Wei Wang Yibai Xue Fan Wang Dong Pan Yi Li Jerry Zhou

半导体学报（英文版）2025，Vol.46Issue(12)：51-57,7.

半导体学报（英文版）2025，Vol.46Issue(12)：51-57,7.DOI:10.1088/1674-4926/25030030

A high reliability NOR flash cell in 50 nm node technology

Kevin Fang ¹Wei Wang ²Yibai Xue ³Fan Wang ²Dong Pan ²Yi Li ³Jerry Zhou¹

作者信息

1. School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China||Wuhan Xinxin Semiconductor manufacturing Co.Ltd,Wuhan 403402,China
2. Wuhan Xinxin Semiconductor manufacturing Co.Ltd,Wuhan 403402,China
3. School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China
折叠

摘要

关键词

NOR flash/50 nm/reliability/cell endurance burnout

Key words

NOR flash/50 nm/reliability/cell endurance burnout

引用本文复制引用

Kevin Fang,Wei Wang,Yibai Xue,Fan Wang,Dong Pan,Yi Li,Jerry Zhou..A high reliability NOR flash cell in 50 nm node technology[J].半导体学报（英文版）,2025,46(12):51-57,7.

基金项目

This work was supported by the Fundamental Res-earch Funds for the Central Universities(Grant No.HUST:5003190012),and the Natural Science Foundation of Hubei Province(Grant No.2024AFA043). （Grant No.HUST:5003190012）

半导体学报（英文版）

ISSN：1674-4926

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