首页|期刊导航|半导体学报（英文版）|A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage
半导体学报（英文版）2025，Vol.46Issue(12)：73-79,7.DOI:10.1088/1674-4926/25040026
A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage
A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage
摘要
关键词
GaN/SBDs/γ irradiation/breakdown voltage/radiation-resistanceKey words
GaN/SBDs/γ irradiation/breakdown voltage/radiation-resistance引用本文复制引用
Jiahao Chen,Jincheng Zhang,Tao Zhang,Ziqi Tao,Kai Su,Shengrui Xu,Xiangdong Li,Huake Su,Yachao Zhang,Yue Hao..A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage[J].半导体学报（英文版）,2025,46(12):73-79,7.基金项目
This work is supported in part by the Key Research and Development Projects of Shaanxi Province(Grant No.2024GX-YBXM-082),in part by the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-JQ-56),in part by the Fundamental Research Funds for the Cen-tral Universities(Grant Nos.QTZX23076,XJSJ25014),and in part by the funding of the National Key Research and Develop-ment Program of China(Grant No.2022YFB3604400),in part by the China Postdoctoral Science Foundation(Grant No.2021TQ0256). （Grant No.2024GX-YBXM-082）
