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Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires

Ratmir Ustimenko Danila Karaulov Maxim Vinnichenko Ilya Norvatov Andrey Kaveev Vladimir Fedorov Ivan Mukhin Dmitry Firsov

半导体学报(英文版)2025,Vol.46Issue(12):94-99,6.
半导体学报(英文版)2025,Vol.46Issue(12):94-99,6.DOI:10.1088/1674-4926/25030041

Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires

Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires

Ratmir Ustimenko 1Danila Karaulov 1Maxim Vinnichenko 1Ilya Norvatov 1Andrey Kaveev 2Vladimir Fedorov 3Ivan Mukhin 3Dmitry Firsov1

作者信息

  • 1. Institute of Electronics and Telecommunications,Peter the Great St.Petersburg Polytechnic University,195251,Saint Petersburg,Russia
  • 2. Renelab,Alferov University,194021,Saint Petersburg,Russia||Ioffe Institute,194021,Saint Petersburg,Russia
  • 3. Institute of Electronics and Telecommunications,Peter the Great St.Petersburg Polytechnic University,195251,Saint Petersburg,Russia||Renelab,Alferov University,194021,Saint Petersburg,Russia
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摘要

关键词

nanowires/photoluminescence/InAsN/InAs/InP/core/shell/passivation

Key words

nanowires/photoluminescence/InAsN/InAs/InP/core/shell/passivation

引用本文复制引用

Ratmir Ustimenko,Danila Karaulov,Maxim Vinnichenko,Ilya Norvatov,Andrey Kaveev,Vladimir Fedorov,Ivan Mukhin,Dmitry Firsov..Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires[J].半导体学报(英文版),2025,46(12):94-99,6.

基金项目

R.V.U.,D.A.K.,M.Ya.V.,I.A.N.and D.A.F.thank the Ministry of Education and Science of the Russian Federation(state assignment No.FSEG-2023-0016)for financial support of opti-cal studies.NW synthesis conducted by A.K.K.,V.V.F.and I.S.M.was financially supported by FSRM 2023-0007 project provided by the Ministry of Education and Science of the Rus-sian Federation. (state assignment No.FSEG-2023-0016)

半导体学报(英文版)

1674-4926

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