首页|期刊导航|半导体学报(英文版)|Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires
半导体学报(英文版)2025,Vol.46Issue(12):94-99,6.DOI:10.1088/1674-4926/25030041
Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires
Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires
摘要
关键词
nanowires/photoluminescence/InAsN/InAs/InP/core/shell/passivationKey words
nanowires/photoluminescence/InAsN/InAs/InP/core/shell/passivation引用本文复制引用
Ratmir Ustimenko,Danila Karaulov,Maxim Vinnichenko,Ilya Norvatov,Andrey Kaveev,Vladimir Fedorov,Ivan Mukhin,Dmitry Firsov..Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires[J].半导体学报(英文版),2025,46(12):94-99,6.基金项目
R.V.U.,D.A.K.,M.Ya.V.,I.A.N.and D.A.F.thank the Ministry of Education and Science of the Russian Federation(state assignment No.FSEG-2023-0016)for financial support of opti-cal studies.NW synthesis conducted by A.K.K.,V.V.F.and I.S.M.was financially supported by FSRM 2023-0007 project provided by the Ministry of Education and Science of the Rus-sian Federation. (state assignment No.FSEG-2023-0016)