首页|期刊导航|电子学报（英文）|A 1.5×109 ION/IOFF Ratio p-Channel InGaN MESFET with p-GaN/InGaN/AlN Composite-Channel and Tungsten Gate

A 1.5×109 ION/IOFF Ratio p-Channel InGaN MESFET with p-GaN/InGaN/AlN Composite-Channel and Tungsten Gate

Huake Su Tao Zhang Shengrui Xu Yuan Gao Jingyu Jia Jun Huang Jincheng Zhang Hongchang Tao Yue Hao

电子学报（英文）2025，Vol.34Issue(6)：1661-1667,7.

电子学报（英文）2025，Vol.34Issue(6)：1661-1667,7.DOI:10.23919/cje.2025.00.096

A 1.5×109 ION/IOFF Ratio p-Channel InGaN MESFET with p-GaN/InGaN/AlN Composite-Channel and Tungsten Gate

Huake Su ¹Tao Zhang ¹Shengrui Xu ¹Yuan Gao ²Jingyu Jia ¹Jun Huang ³Jincheng Zhang ¹Hongchang Tao ¹Yue Hao¹

作者信息

1. State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
2. State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China||Hangzhou Institute of Technology,Xidian University,Hangzhou 311200,China
3. Hubei Jiufengshan Laboratory,Wuhan 430074,China
折叠

摘要

关键词

InGaN channel/ION/IOFF ratio/p-Channel field-effect transistor/Hysteresis effect/Subthreshold swing

Key words

InGaN channel/ION/IOFF ratio/p-Channel field-effect transistor/Hysteresis effect/Subthreshold swing

引用本文复制引用

Huake Su,Tao Zhang,Shengrui Xu,Yuan Gao,Jingyu Jia,Jun Huang,Jincheng Zhang,Hongchang Tao,Yue Hao..A 1.5×109 ION/IOFF Ratio p-Channel InGaN MESFET with p-GaN/InGaN/AlN Composite-Channel and Tungsten Gate[J].电子学报（英文）,2025,34(6):1661-1667,7.

基金项目

This work was supported by the National Key R&D Pro-gram of China(Grant No.2022YFB3604400),the Key Research and Development Plan of Shaanxi Province(Grant No.2024GX-YBXM-082),the National Natural Science Foundation of China(Grant No.62104185),the Fundamental Research Funds for the Central Universi-ties(Grant Nos.QTZX23076,ZYTS25225,and ZYT S25216),the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-JQ-56),and the Central Funds Guiding the Local Science and Technolo-gy Development Project of Hubei Province(Grant No.2022BFE001). （Grant No.2022YFB3604400）

电子学报（英文）

ISSN：1022-4653

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