摘要
Abstract
Silicon carbide(SiC)has excellent characteristics such as large band gap,high critical breakdown field strength,large saturated electron drift speed and high thermal conductivity,and has important application prospects in the fields of high temperature,high frequency,and high power devices.However,various defects in SiC are still the main factors restricting the development of SiC devices.In view of the current forward characteristic degradation problem of SiC-PiN devices,Shockley-type stacking faults(SSF)in SiC are mainly introduced,focusing on the formation mechanism,classification,commonly used characterization methods and the determination of incomplete dislocation Burgers vector and core structure of SSF in 4H-SiC.Methods for suppressing SSF are summarized,which provides a theoretical basis for deeply understanding the nature of stacking faults in SiC and provides technical guidance for improving the performance of SiC devices.关键词
SiC/Shockley层错/基平面位错/滑移/4H-SiCKey words
SiC/Shockley stacking fault/base plane dislocation/slip/4H-SiC分类
信息技术与安全科学
