电子学报2025，Vol.53Issue(9)：3163-3172,10.DOI:10.12263/DZXB.20250400
基于原子阈值开关的二维沟道材料场效应晶体管解析模型研究
Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs
摘要
Abstract
Two-dimensional atomic-threshold-switching field-effect-transistors(2D ATS-FETs)offer great promise for low-power applications in logic computing,selectors,and neuromorphic systems in the post-Moore era,thanks to their ultra-low off-state current,extremely small subthreshold swing,ultra-low operating voltage,compact device structure,and compatibility with mainstream complementary metal-oxide-semiconductor(CMOS)process.A 2D ATS-FET can be regard-ed as a series connection of an atomic threshold switching(TS)device and a baseline 2D FET.In this study,we first devel-oped a current-voltage(Ⅰ-Ⅴ)model for the TS device based on conductive filament(CF)evolution dynamics and tunneling mechanisms.Then,we propose a current-voltage model for the baseline 2D FET based on drift-diffusion transport mecha-nisms.Finally,by leveraging the fact that the conduction current of the two series-connected devices must be equal,we im-plemente a standard simulation program with integrated circuit emphasis(SPICE)model compatible with mainstream com-mercial circuit simulators using the Verilog-A language.The calculated results from the analytical model show good agree-ment with experimental data,validating the correctness of the proposed theoretical model.Furthermore,we systematically investigated the electrical characteristics and working mechanisms of 2D ATS-FETs based on this analytical model.This an-alytical model provides a reliable theoretical foundation and an effective research tool for the study of device mechanisms,performance optimization,and circuit design of 2D ATS-FETs.关键词
原子阈值开关(TS)/二维(2D)沟道材料/场效应晶体管/亚阈值摆幅/解析模型Key words
atomic-threshold-switching(TS)/two-dimensional(2D)channel material/field effect transistor/sub-threshold swing/analytical model分类
信息技术与安全科学引用本文复制引用
蒋春生,霍亦康,化麒麟,宋树祥,潘立阳,许军..基于原子阈值开关的二维沟道材料场效应晶体管解析模型研究[J].电子学报,2025,53(9):3163-3172,10.基金项目
国家自然科学基金(No.U24A20296,No.62464001) （No.U24A20296,No.62464001）
北京超弦存储器研究院资助项目(No.SAMT-QH-KT-22030101) （No.SAMT-QH-KT-22030101）
广西类脑计算与智能芯片重点实验室开放基金(No.BCIC-23-K5) （No.BCIC-23-K5）
广西研究生教育创新计划项目(No.YCSW2025152) National Natural Science Foundation of China(No.U24A20296,No.62464001) （No.YCSW2025152）
Beijing Super-string Academy of Memory Technology(No.SAMT-QH-KT-22030101) （No.SAMT-QH-KT-22030101）
Guangxi Key Laboratory of Brain-inspired Com-puting and Intelligent Chips(No.BCIC-23-K5) （No.BCIC-23-K5）
Innovation Project of Guangxi Graduate Education(No.YCSW2025152) （No.YCSW2025152）
