现代电子技术2026，Vol.49Issue(1)：1-7,7.DOI:10.16652/j.issn.1004-373x.2026.01.001
4T/8T像素结构CMOS图像传感器的空间辐照影响及加固技术研究
4T/8T pixel structure CMOS image sensor space radiation progress and reinforcement technology
摘要
Abstract
Complementary metal oxide semiconductor(CMOS)contact image sensor(CIS)is often used to detect the direction of beacon light in the acquisition,tracking and pointing(ATP)system in space optical communication.Space irradiation will affect the working performance and service life of CMOS image sensor.The research on the influence principle of space irradiation on devices and the anti-irradiation reinforcement technology can improve the practical engineering application ability of CMOS image sensors.The 4T/8T(transistor)pixel structure CMOS image sensor is widely used in the current ATP system.In this paper,the research results of irradiation test and the anti-irradiation reinforcement technology of 4T/8T pixel structure CIS at home and abroad are summarized in the three aspects of total ionization dose effect,displacement damage effect and single event effect.A reinforcement single event effect technology for CIS of 8T pixel structure is proposed.The single event upset effect of CMOS image sensor and FPGA is corrected without power off and restart.In addition,the shutdown and restart of CMOS image sensor during single event latch-up is realized,and the anti-radiation effect performance of CMOS image sensor is improved.关键词
CMOS图像传感器/电离总剂量效应/位移损伤效应/单粒子效应/抗辐射加固技术/空间辐射Key words
CMOS image sensor/total ionization dose effect/displacement damage effect/single event effect/anti-irradiation reinforcement technology/space irradiation分类
信息技术与安全科学引用本文复制引用
王婷婷,杨小曦,姜浩,张琪,张亮..4T/8T像素结构CMOS图像传感器的空间辐照影响及加固技术研究[J].现代电子技术,2026,49(1):1-7,7.基金项目
中国科学院先导专项(XDB35000000) （XDB35000000）
上海市"基础研究特区计划"资助项目 （）
