有色金属材料与工程2025，Vol.46Issue(6)：41-48,8.DOI:10.13258/j.cnki.nmme.20240415003
掺杂对β-Ga2O3晶体力学性能影响
Effect of doping on mechanical properties of β-Ga2O3 crystals
摘要
Abstract
β-Ga2O3 is a wide-bandgap semiconductor with excellent performance.However,its single crystal exhibits high hardness,brittleness,and significant anisotropy,which has long posed a challenge for its precision machining.This study investigated the regulatory effect of low-concentration Sn doping and high-concentration Al doping on the mechanical properties of β-Ga2O3 single crystals.First,X-ray diffraction and Raman spectroscopy were used to characterize the lattice constants and crystal structures of Sn-doped and Al-doped β-Ga2O3.The results showed that low-concentration Sn doping did not change the crystal structure of β-Ga2O3,and no additional impurity phases were formed;whereas Al doping caused the disappearance of some characteristic peaks in the Raman spectra,confirming that it induced lattice distortion.Regarding the effect of doping on mechanical properties,nanoindentation tests showed that both low-concentration Sn doping and high-concentration Al doping could significantly improve the hardness and elastic modulus of β-Ga2O3;however,the results of indentation fracture toughness tests and nano-scratch tests revealed that excessively high Al doping concentration would lead to a significant decrease in the material's toughness.关键词
β-Ga2O3单晶/弹性模量/掺杂/硬度/纳米压痕Key words
β-Ga2O3 single crystal/elastic modulus/adulterate/hardness/nanoindentation分类
数理科学引用本文复制引用
孔文博,李颖,潘明艳,张璐,姜博文,纪为国..掺杂对β-Ga2O3晶体力学性能影响[J].有色金属材料与工程,2025,46(6):41-48,8.基金项目
上海市科学技术委员会资助项目(23511102300) （23511102300）
