有色金属材料与工程2025，Vol.46Issue(6)：49-56,8.DOI:10.13258/j.cnki.nmme.20241129001
氧化镓功率器件性能温度响应的仿真与优化
Simulation and optimization of Ga2O3 power device performance temperature response
摘要
Abstract
To address the issue of the low intrinsic thermal conductivity of Ga2O3,the intelligent ion-cutting technique is employed to heterogeneously integrate Ga2O3 thin films with high-thermal-conductivity substrates,thereby enhancing the device's heat dissipation capability.In this work,we utilize Sentaurus TCAD to conduct systematic simulations and studies on the temperature response of both homoepitaxial Ga2O3 devices and Ga2O3-on-SiC(GaO/SiC)power devices.Additionally,using COMSOL Multiphysics,we simulate the temperature distribution of GaO/SiC MOSFETs under various conditions and analyze the impact of passivation layers,intermediate adhesion layers,and substrate types on device heat dissipation.The results demonstrate that,under the same power conditions,compared with the homoepitaxial Ga2O3 MOSFET,the GaO/SiC MOSFET exhibits a peak temperature reduction of～202 K,showcasing a significant mitigation of the self-heating effect in Ga2O3 devices through integration with high-thermal-conductivity substrates.Moreover,GaO/SiC MOSFETs exhibit superior performance compared to homoepitaxial Ga2O3 MOSFETs in terms of threshold voltage,on-off ratio,on-resistance,and breakdown voltage.Furthermore,the presence of an SiO2/SiNx intermediate adhesion layer for bonding results in a 16 K increase in the maximum device temperature rise.Increasing the thickness of the AlN passivation layer can lead to a modest reduction in the maximum device temperature rise.In contrast,Ga2O3 devices integrated with diamond(a higher thermal conductivity substrate)exhibit a more pronounced temperature rise reduction(～330 K)compared to homoepitaxial devices.关键词
氧化镓/异质集成/Sentaurus TCAD/COMSOL/功率器件/温度响应Key words
gallium oxide/heterogeneous integration/Sentaurus TCAD/COMSOL/power device/temperature response分类
信息技术与安全科学引用本文复制引用
谢玉环,瞿振宇,赵天成,徐文慧,游天桂,杨义..氧化镓功率器件性能温度响应的仿真与优化[J].有色金属材料与工程,2025,46(6):49-56,8.基金项目
上海市战略前沿专项(24DP1500100) （24DP1500100）
上海市"科技创新行动计划"启明星(22QA1410700) （22QA1410700）
