| 注册
首页|期刊导航|高电压技术|基于IGCT的ANPC三电平变流器内管过压机理及抑制方法

基于IGCT的ANPC三电平变流器内管过压机理及抑制方法

LI Xiaoguang ZHANG Hanrui QU Lu LI Guodong CUI Bin YU Zhanqing

高电压技术2025,Vol.51Issue(12):6053-6062,10.
高电压技术2025,Vol.51Issue(12):6053-6062,10.DOI:10.13336/j.1003-6520.hve.20241905

基于IGCT的ANPC三电平变流器内管过压机理及抑制方法

Overvoltage Mechanism and Suppression Method of ANPC Three Level Converter Internal Tube Based on IGCT

LI Xiaoguang 1ZHANG Hanrui 1QU Lu 1LI Guodong 1CUI Bin 1YU Zhanqing1

作者信息

  • 1. Department of Electrical Engineering and Applied Electronic Technology,Tsinghua University,Beijing 100084,China
  • 折叠

摘要

Abstract

Using integrated gate commutated thyristor(IGCT)to construct an active neutral point clamped(ANPC)three-level converter is an effective way to meet the needs of medium-voltage and high-power converter systems.The in-ner tube fundamental frequency modulation can reduce the commutation path length of the IGCT valve string,thereby reducing commutation loop spurs and reducing the turn-off voltage stress of the power device.This article first reveals the mechanism of the internal tube overvoltage caused by the existing inner tube fundamental frequency modulation strategy applied to the IGCT-based ANPC topology,and further analyzes the limitations of the existing inner tube overvoltage suppression method based on RCD snubber circuits.Finally,an optimized inner tube fundamental frequency modulation strategy commutation method with inner tube overvoltage suppression function is proposed to completely avoid the inner tube overvoltage problem.The experiment verifies the correctness of the theoretical analysis and the feasibility of the proposed method.

关键词

IGCT/ANPC/三电平/内管基频调制/内管过压/过压抑制

Key words

IGCT/ANPC/three-level/inner tube fundamental frequency modulation/inner tube overvoltage/overvoltage suppression

引用本文复制引用

LI Xiaoguang,ZHANG Hanrui,QU Lu,LI Guodong,CUI Bin,YU Zhanqing..基于IGCT的ANPC三电平变流器内管过压机理及抑制方法[J].高电压技术,2025,51(12):6053-6062,10.

高电压技术

OA北大核心

1003-6520

访问量0
|
下载量0
段落导航相关论文