人工晶体学报2025，Vol.54Issue(12)：2037-2059,23.DOI:10.16553/j.cnki.issn1000-985x.2025.0127
立方碳化硅外延生长的研究进展
Research Progress on the Epitaxial Growth of Cubic Silicon Carbide
摘要
Abstract
Silicon carbide(SiC),as a representative third-generation wide-bandgap semiconductor material,has demonstrated great potential for applications in high-temperature,high-voltage,and high-frequency power electronic devices due to its excellent electrical,thermal,and mechanical properties.Among the various SiC polytypes,cubic silicon carbide(3C-SiC)exhibits higher electron mobility,lower interface trap density,and superior channel characteristics,making it highly competitive for devices operating in the medium voltage range.This review summarizes the recent progress in the epitaxial growth of 3C-SiC,with a particular focus on comparing the characteristics of chemical vapor deposition(CVD)and sublimation epitaxy(SE)in terms of growth processes,defect evolution,and substrate selection.The formation mechanisms and impacts of key structural defects including point defects,stacking faults,anti-phase boundaries,surface protrusions,and residual stress are systematically analyzed.Furthermore,the latest advances in 3C-SiC-based power diodes,MOSFETs,and heterostructure devices are reviewed.Finally,future development directions for improving the epitaxial quality and device performance of 3C-SiC through substrate engineering,defect control,and process optimization are discussed.关键词
立方碳化硅/化学气相沉积法/升华外延法/外延生长/缺陷/功率器件Key words
cubic silicon carbide/chemical vapor deposition method/sublimation epitaxy method/epitaxial growth/defect/power device分类
数理科学引用本文复制引用
LU Zhengxuan,LI Chen,ZHOU Chao,LU Yuanhao,LI Haochao,KE Shanming,TONG Shukyin..立方碳化硅外延生长的研究进展[J].人工晶体学报,2025,54(12):2037-2059,23.基金项目
国家自然科学基金(52372104) （52372104）
广东省量子科学战略计划(SZZX2301005) （SZZX2301005）
广东省基础与应用基础研究基金(2024A1515012377) （2024A1515012377）
