人工晶体学报2025，Vol.54Issue(12)：2072-2082,11.DOI:10.16553/j.cnki.issn1000-985x.2025.0151
物理气相传输法生长大直径碳化硅单晶多型夹杂缺陷控制研究
Defect Control of Polytype Inclusion in Large-Diameter SiC Single Crystal Grown by PVT Method
摘要
Abstract
This study addresses the control of 6H-SiC polytype inclusions during the physical vapor transport(PVT)growth of 8-inch(1 inch=2.54 cm)N-type 4H-SiC crystals through experimental and numerical simulation approaches.Firstly,the emergence timing and locations of 6H-SiC polytype inclusions were determined via experimental observations(by RF heating system).A numerical simulation of the entire crystal growth process was then conducted,tracking the evolution of temperature at the growth front edge and the carbon supersaturation ratio in its vicinity over time.This enabled the establishment of critical condition criteria for 6H-SiC polytype inclusion formation.Based on these criteria,the correlation between process parameters and 6H-SiC polytype inclusion defects was systematically investigated for a typical large-scale multi-zone resistive-heating PVT growth system.The findings reveal that for a given PVT system,increasing the upper/lower heater power ratio and the argon gas pressure contributes to suppressing the formation of 6H-SiC polytype inclusions.关键词
4H-SiC/物理气相传输法/晶体生长/6H-SiC多型夹杂/缺陷控制/数值模拟Key words
4H-SiC/PVT method/crystal growth/6H-SiC polytype inclusion/defect control/numerical simulation分类
数理科学引用本文复制引用
LU Jiazheng,HU Runguang,ZHENG Lili,ZHANG Hui,HU Dongli..物理气相传输法生长大直径碳化硅单晶多型夹杂缺陷控制研究[J].人工晶体学报,2025,54(12):2072-2082,11.基金项目
锡山-清华产学研深度融合专项 （）
