人工晶体学报2025，Vol.54Issue(12)：2083-2100,18.DOI:10.16553/j.cnki.issn1000-985x.2025.0109
温度梯度对PVT法生长大尺寸SiC断裂应力的影响
Effects of the Temperature Gradient on the Fracture Stress of Large-Sized SiC Grown by PVT Method
摘要
Abstract
Fracture stress remains the primary barrier preventing the diameter of silicon carbide(SiC)single crystals grown by the physical vapor transport(PVT)method from exceeding 200 mm.In the present study,the fracture stress was calculated under both 4°off-axis and on-axis growth conditions.The results demonstrate comparable fracture behavior between the two growth conditions,with negligible contributions from basal plane slips and nearly identical effects of prismatic plane slips.Besides,the effects of the temperature gradient on the fracture stress were elaborated,suggesting that almost all fracture stresses arise from the radial temperature gradient at high temperatures,while the axial temperature gradient exhibits minimal effect.Further simulations investigated the effects of temporal shape evolution,crystal convexity,and diameter,revealing a consistent correlation between fracture stress magnitude and radial temperature gradient variation.This study provides furthsinsights into the fracture stress-temperature gradient relationship,offering guidance for fracture prevention during PVT growth.关键词
碳化硅/物理气相传输(PVT)法/数值模拟/单晶生长/断裂应力/温度梯度Key words
silicon carbide/physical vapor transport(PVT)method/numerical simulation/single crystal growth/fracture stress/temperature gradient分类
通用工业技术引用本文复制引用
XU Binjie,CHEN Pengyang,LU Sheng'ou,XUAN Lingling,WANG Anqi,WANG Fan,PI Xiaodong,YANG Deren,HAN Xuefeng..温度梯度对PVT法生长大尺寸SiC断裂应力的影响[J].人工晶体学报,2025,54(12):2083-2100,18.基金项目
浙江省"尖兵""领雁"研发攻关计划(2023C01010) （2023C01010）
国家自然科学基金青年科学基金(52202189) （52202189）
