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磁场强度对12英寸Cz单晶硅COP缺陷均匀性的影响

WANG Zhongbao ZHANG Youhai LIU Tianpei NI Haoran RUI Yang MA Cheng WANG Liguang CAO Qigang YANG Shaolin

人工晶体学报2025，Vol.54Issue(12)：2101-2111,11.
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人工晶体学报2025，Vol.54Issue(12)：2101-2111,11.DOI:10.16553/j.cnki.issn1000-985x.2025.0130

磁场强度对12英寸Cz单晶硅COP缺陷均匀性的影响

Effect of Magnetic Field Strength on the Uniformity of COP Defects in 12 Inch Cz Monocrystalline Silicon

WANG Zhongbao 1ZHANG Youhai 1LIU Tianpei 2NI Haoran 1RUI Yang 1MA Cheng 1WANG Liguang 1CAO Qigang 1YANG Shaolin3

作者信息

  • 1. Ningxia Research Center of Semiconductor-grade Silicon Wafer Materials Engineering Technology,Ningxia Zhongxin Wafer Semiconductor Technology Co.,Ltd.,Yinchuan 750021,China
  • 2. Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China
  • 3. Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China||Institute of Semiconductor Crystals and Ceramic Materials,Helanshan Laboratory,Yinchuan 750021,China
  • 折叠

摘要

Abstract

In semiconductor manufacturing,monocrystalline silicon grown by Czochralski(Cz)method serves as the core substrate for microelectronic devices,with its crystal integrity and defect distribution being crucial for chip yield and reliability.However,the issue of non-uniform radial distribution of crystal originated particle(COP)defects during the Cz growth process urgently needs to be addressed.This paper investigates,through numerical simulations and experimental research,the effects of different transverse magnetic field strengths(500 and 3 000 Gs)on melt convection,melt temperature distribution,and the temperature gradient at the solid-liquid interface during the pulling of 12 inch(1 inch=2.54 cm)Cz monocrystalline silicon.It also analyzes the mechanism by which magnetic field strength influences the uniformity of COP distribution.The results indicate that under a 3 000 Gs magnetic field,the melt flow,temperature distribution,and the temperature gradient at the solid-liquid interface are more stable,facilitating the formation of a low-density and uniform COP distribution.In contrast,under a 500 Gs magnetic field strength,the COP distribution throughout the silicon ingot exhibits high density and non-uniformity.The experimental results are consistent with the numerical simulations,verifying the significant impact of magnetic field strength on the uniformity of COP distribution.This study provides a theoretical basis and practical guidance for optimizing the Cz monocrystalline silicon growth process and improving crystal quality.

关键词

单晶硅/半导体/磁场强度/直拉法/COP/均匀性

Key words

monocrystalline silicon/semiconductor/magnetic field strength/Czochralski method/COP/uniformity

分类

数理科学

引用本文复制引用

WANG Zhongbao,ZHANG Youhai,LIU Tianpei,NI Haoran,RUI Yang,MA Cheng,WANG Liguang,CAO Qigang,YANG Shaolin..磁场强度对12英寸Cz单晶硅COP缺陷均匀性的影响[J].人工晶体学报,2025,54(12):2101-2111,11.

基金项目

2023年银川市科技支撑项目(2023GXHZC02) （2023GXHZC02）

2024年宁夏回族自治区重点研发计划项目(2024BEE02012) （2024BEE02012）

人工晶体学报

OA北大核心

1000-985X

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