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微纳光控真空晶体管太赫兹辐射源机理及工艺探索研究

SHI Bin-bin SHU Guo-xiang LI Xin-qiang HONG Sheng-tao HUANG Long-shen RUAN Cun-jun HE Wen-long

真空电子技术Issue(6):20-25,6.
真空电子技术Issue(6):20-25,6.DOI:10.16540/j.cnki.cn11-2485/tn.2025.06.04

微纳光控真空晶体管太赫兹辐射源机理及工艺探索研究

Study on Mechanism and Process of Micro/Nano Optical-Controlled Vacuum Transistor Terahertz Radiation Sources

SHI Bin-bin 1SHU Guo-xiang 1LI Xin-qiang 1HONG Sheng-tao 1HUANG Long-shen 1RUAN Cun-jun 1HE Wen-long1

作者信息

  • 1. @@@1.a.College of Electronics and Information Engineering,Shenzhen University,b.State Key Laboratory of Radio Frequency Heterogeneous Integration,Shenzhen 518060,China||2.School of Electronic and Information Engineering,Beihang University,Beijing 100191,China
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摘要

Abstract

As core components of terahertz(THz)technology application systems,the miniaturized high-pow-er terahertz radiation sources demonstrate broad application prospects in numerous military and civilian fields,in-cluding radar detection and security inspection imaging.A novel micro/nano optical-controlled vacuum transistor terahertz radiation source is introduced,which integrates the technical advantages of vacuum electronics,semicon-ductor electronics and optoelectronics,exhibiting unique merits in achieving high-power continuous-wave(CW)ra-diation across an ultra-broadband spectrum.The operating mechanism of this novel terahertz device is elucidated.To address critical technical challenges in high-precision micro/nano fabrication,exploratory research is conducted on the fabrication processes of its core components.By employing MEMS micro/nano fabrication techniques,inclu-ding ultraviolet(UV)lithography,electron-beam evaporation,and plasma etching,the miniaturized terahertz anten-na and vacuum channel arrays are successfully fabricated.The processing error of the antenna is within±0.664 μm.The measured reflection coefficient and input impedance show good agreement with the simulation results.The re-flection coefficient|S11|remains below-10 dB across the frequency range of 36.3~100 GHz.The measured etch-ing depth of the vacuum channel is consistent with the designed value of 5 μm.The experimental results verify the feasibility of the process and lay the foundation for the overall processing of terahertz radiation sources.The micro/nano optical controlled transistor terahertz radiation sources not only provide a promising new technological path,but also have the potential to become miniaturized high-power terahertz radiation sources.

关键词

太赫兹辐射源/真空晶体管/太赫兹天线/微纳加工

Key words

Terahertz radiation source/Vacuum transistor/Terahertz antenna/Micro/nano fabrication

分类

信息技术与安全科学

引用本文复制引用

SHI Bin-bin,SHU Guo-xiang,LI Xin-qiang,HONG Sheng-tao,HUANG Long-shen,RUAN Cun-jun,HE Wen-long..微纳光控真空晶体管太赫兹辐射源机理及工艺探索研究[J].真空电子技术,2025,(6):20-25,6.

基金项目

广东省自然科学基金—杰出青年项目基金(2025B1515020006),深圳市海外高层次人才团队项目(KQTD20200820113046084) (2025B1515020006)

真空电子技术

1002-8935

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