材料科学与工程学报2025，Vol.43Issue(6)：932-939,8.DOI:10.14136/j.cnki.issn1673-2812.2025.06.008
二硫化钼墨水制备及其在直写墨水打印忆阻器中的应用
Preparation of Molybdenum Disulfide Ink and Its Application in Memristors Fabricated by Direct Ink Writing
摘要
Abstract
In this paper,the effects of preparation parameters of molybdenum disulfide(MoS2)ink on its viscosity,surface tension,micro-morphology and structure were characterized in detail,and the electrical properties of the horizontal structure two-end memristor prepared by MoS2 ink via direct ink writing(DIW)were tested.The results show that layered microstructure and loose nanosheets are found in the MoS2 ink with low viscosity(4.82 cP)and surface tension(38.3 mN·m-1)prepared by the exfoliation method based on tetraheptylammonium bromide(THAB).The structure of MoS2 inside this kind of ink is from monolayer to bilayer.However,small particles are observed in the MoS2 ink prepared by the precursor method of ammonium tetrathiomolybdate(ATTM),which represents that it is failed to form MoS2 nanosheets due to the structural defects caused by the loss of S during thermal annealing.Moreover,nonlinear conductivity,high switching current ratio,and long-term stability(more than 4×103 s)are characterized in memristors using the THAB-exfoliated ink,which is better than that prepared by the ATTM precursor method.Therefore,memristors of two-terminal and horizontal structures with better performance can be prepared with the MoS2 ink prepared by THAB-exfoliated method,which is more suitable for DIW technology.An important reference is provided for other solution-based memristor preparation technologies such as inkjet printing.关键词
二硫化钼(MoS2)/黏度/表面张力/直写墨水打印(DIW)/忆阻器Key words
Molybdenum disulfide(MoS2)/Viscosity/Surface tension/Direct ink writing(DIW)/Memristor分类
通用工业技术引用本文复制引用
宋翊,张慧慧,钱波,郭浩,周诗羽,袁志钟..二硫化钼墨水制备及其在直写墨水打印忆阻器中的应用[J].材料科学与工程学报,2025,43(6):932-939,8.基金项目
广东省重点领域研发计划项目(2018B090905002) （2018B090905002）
