宇航材料工艺2025，Vol.55Issue(6)：15-24,10.DOI:10.12044/j.issn.1007-2330.2025.06.002
6H-SiC滚磨抛光损伤机理的分子动力学仿真研究
Molecular Dynamics Simulation on the Damage Mechanism of 6H-SiC Tumbling Polishing
摘要
Abstract
Silicon carbide(SiC)is widely used in infrared optics and semiconductor manufacturing.Investigating the grinding and polishing behavior of hard and brittle silicon carbide at the nanoscale is of great significance for improving component performance.In this study,a molecular dynamics model of 6H-SiC tumbling polishing was established to investigate the influence of different rolling speeds of diamond abrasive grains on the material removal behavior,surface morphology,subsurface damage,tangential and normal forces,and friction coefficient of the 6H-SiC workpiece,thereby revealing the damage mechanism of 6H-SiC during grinding and polishing.The results indicate that at a rolling speed of 25 m/s,chips accumulate in front of the abrasive grain due to shear and extrusion.As the rolling speed increases,the chips adhere to the abrasive grain and eventually detach,resulting in no chip accumulation on the workpiece surface.With an increase in the abrasive grain's rolling speed,the material removal mechanism of 6H-SiC gradually shifts from being predominantly plowing-driven to adhesion-driven.Consequently,the subsurface damage depth,average atomic temperature,tangential force,normal force,and friction coefficient exhibit a gradual decreasing trend.At a rolling speed of 100 m/s,the tangential force decreases by approximately 75％,the normal force by about 40％,and the friction coefficient by roughly 72％.关键词
6H-SiC/滚磨抛光/分子动力学模型/亚表面损伤/材料去除行为Key words
6H-SiC/Tumbling polishing/Molecular dynamics model/Subsurface damage/Material removal behavior分类
信息技术与安全科学引用本文复制引用
双佳俊,耿瑞文,谢启明,吴海华,李立军..6H-SiC滚磨抛光损伤机理的分子动力学仿真研究[J].宇航材料工艺,2025,55(6):15-24,10.基金项目
水电机械设备设计与维护湖北省重点实验室开放基金(2023KJX04) （2023KJX04）
宜昌市自然科学基金(A25-3-005) （A25-3-005）
隧道工程灾变防控与智能建养全国重点实验室开放基金课题(TESKL202415) （TESKL202415）
湖北省教育厅科学技术研究项目(B2024020) （B2024020）
