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Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal

Feng Liang Fangfang Zhang Jing Yang Degang Zhao Shilie Pan

半导体学报（英文版）2026，Vol.47Issue(1)：1-4,4.

半导体学报（英文版）2026，Vol.47Issue(1)：1-4,4.DOI:10.1088/1674-4926/25110004

Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal

Feng Liang ¹Fangfang Zhang ²Jing Yang ¹Degang Zhao ¹Shilie Pan²

作者信息

1. Laboratory of Solid-State Optoelectronic Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
2. CAS Key Laboratory of Functional Materials and Devices for Special Environmental Conditions,Xinjiang Key Laboratory of Functional Crystal Materials,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

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Feng Liang,Fangfang Zhang,Jing Yang,Degang Zhao,Shilie Pan..Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal[J].半导体学报（英文版）,2026,47(1):1-4,4.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140),Tianshan Innovation Team Program(Grant No.2022TSYCTD0005),Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)and Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032). （Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140）

半导体学报（英文版）

ISSN：1674-4926

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