半导体学报（英文版）2026，Vol.47Issue(1)：29-40,12.DOI:10.1088/1674-4926/25030039
Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substrates
Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substrates
Xinyue He 1Gangcheng Jiao 2Hongchang Cheng 2Tianjiao Lu 1Ye Li 1De Song 1Weijun Chen1
作者信息
- 1. School of Science,Changchun University of Science and Technology,Changchun 130022,China
- 2. Science and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,China
- 折叠
摘要
关键词
EBCMOS/dark current electron number/gain/SNRKey words
EBCMOS/dark current electron number/gain/SNR引用本文复制引用
Xinyue He,Gangcheng Jiao,Hongchang Cheng,Tianjiao Lu,Ye Li,De Song,Weijun Chen..Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substrates[J].半导体学报（英文版）,2026,47(1):29-40,12.
