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A low-thermal-budget MOSFET-based reservoir computing for temporal data classification

Yanqing Li Feixiong Wang Heyi Huang Yadong Zhang Xiangpeng Liang Shuang Liu Jianshi Tang Huaxiang Yin

半导体学报（英文版）2026，Vol.47Issue(1)：41-48,8.

半导体学报（英文版）2026，Vol.47Issue(1)：41-48,8.DOI:10.1088/1674-4926/25080038

A low-thermal-budget MOSFET-based reservoir computing for temporal data classification

Yanqing Li ¹Feixiong Wang ¹Heyi Huang ¹Yadong Zhang ¹Xiangpeng Liang ²Shuang Liu ¹Jianshi Tang ²Huaxiang Yin¹

作者信息

1. State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China||School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 101408,China
2. School of Integrated Circuits,Beijing Advanced Innovation Center for Integrated Circuits,BNRist,Tsinghua University,Beijing 100084,China
折叠

摘要

关键词

schottky barrier MOSFET/back-end-of-line integration/reservoir computing

Key words

schottky barrier MOSFET/back-end-of-line integration/reservoir computing

引用本文复制引用

Yanqing Li,Feixiong Wang,Heyi Huang,Yadong Zhang,Xiangpeng Liang,Shuang Liu,Jianshi Tang,Huaxiang Yin..A low-thermal-budget MOSFET-based reservoir computing for temporal data classification[J].半导体学报（英文版）,2026,47(1):41-48,8.

基金项目

This work was supported in part by the Chinese Academy of Sciences(No.XDA0330302)and NSFC program(No.22127901). （No.XDA0330302）

半导体学报（英文版）

ISSN：1674-4926

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