首页|期刊导航|半导体学报（英文版）|A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noise

A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noise

Zhentao Ni Dajing Bian Haoxiang Jiang Xiaoming Huang Yue Xu

半导体学报（英文版）2026，Vol.47Issue(1)：64-71,8.

半导体学报（英文版）2026，Vol.47Issue(1)：64-71,8.DOI:10.1088/1674-4926/25060004

A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noise

Zhentao Ni ¹Dajing Bian ¹Haoxiang Jiang ¹Xiaoming Huang ²Yue Xu²

作者信息

1. College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
2. College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology,Nanjing 210023,China
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摘要

关键词

single-photon avalanche diode(SPAD)/fill factor(FF)/photon detection efficiency(PDE)/dark count rate(DCR)

Key words

single-photon avalanche diode(SPAD)/fill factor(FF)/photon detection efficiency(PDE)/dark count rate(DCR)

引用本文复制引用

Zhentao Ni,Dajing Bian,Haoxiang Jiang,Xiaoming Huang,Yue Xu..A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noise[J].半导体学报（英文版）,2026,47(1):64-71,8.

基金项目

This work has been supported by the National Natural Science Foundation of China under Grant 62171233,the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891,and the Jiangsu Province Gradua-te Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169. （）

半导体学报（英文版）

ISSN：1674-4926

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