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Optoelectronic synapses based on IGZO/Bi3.25La0.75Ti3O12 heterojunctions for human brain learning mechanism simulation

Dongping Yang Hao Chen Zhenhua Tang Qijun Sun Xingui Tang

半导体学报（英文版）2026，Vol.47Issue(1)：72-81,10.

半导体学报（英文版）2026，Vol.47Issue(1)：72-81,10.DOI:10.1088/1674-4926/25060032

Optoelectronic synapses based on IGZO/Bi3.25La0.75Ti3O12 heterojunctions for human brain learning mechanism simulation

Dongping Yang ¹Hao Chen ¹Zhenhua Tang ¹Qijun Sun ¹Xingui Tang¹

作者信息

1. School of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,China
折叠

摘要

关键词

optoelectronic synapses/thin films/neural networks

Key words

optoelectronic synapses/thin films/neural networks

引用本文复制引用

Dongping Yang,Hao Chen,Zhenhua Tang,Qijun Sun,Xingui Tang..Optoelectronic synapses based on IGZO/Bi3.25La0.75Ti3O12 heterojunctions for human brain learning mechanism simulation[J].半导体学报（英文版）,2026,47(1):72-81,10.

基金项目

This work was financially supported by the National Natu-ral Science Foundation of China(Grant Nos.11574057 and 12172093)and the Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515012607). （Grant Nos.11574057 and 12172093）

半导体学报（英文版）

ISSN：1674-4926

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