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Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation

Sangyeob Kim Jeongtae Kim Dong-Seok Kim Hyuncheol Bae Min-Woo Ha Ogyun Seok

半导体学报（英文版）2026，Vol.47Issue(1)：82-89,8.

半导体学报（英文版）2026，Vol.47Issue(1)：82-89,8.DOI:10.1088/1674-4926/25040023

Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation

Sangyeob Kim ¹Jeongtae Kim ²Dong-Seok Kim ³Hyuncheol Bae ⁴Min-Woo Ha ⁵Ogyun Seok¹

作者信息

1. School of Electrical and Electronic Engineering,Pusan National University,Busan,Korea
2. Korea Multi-purpose Accelerator Complex,Korea Atomic Energy Research Institute,Gyeongju,Korea||Department of Semiconductor System Engineering,Kumoh National Institute of Technology,Gumi,Korea
3. Korea Multi-purpose Accelerator Complex,Korea Atomic Energy Research Institute,Gyeongju,Korea
4. Electronics and Telecommunications Research Institute,Daejeon,Korea
5. Department of Electrical Engineering,Myongji University,Yongin,Korea
折叠

摘要

关键词

SiC/proton irradiation/edge termination/radiation hardness/TID effects

Key words

SiC/proton irradiation/edge termination/radiation hardness/TID effects

引用本文复制引用

Sangyeob Kim,Jeongtae Kim,Dong-Seok Kim,Hyuncheol Bae,Min-Woo Ha,Ogyun Seok..Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation[J].半导体学报（英文版）,2026,47(1):82-89,8.

基金项目

This research was supported by the IITP(Institute for Infor-mation&Communications Technology Planning&Evalua-tion)under the ITRC(Information Technology Research Cen-ter)support program(IITP-2025-RS-2024-00438288),grant funded by the Korea government(MSIT)and National Research Council of Science&Technology(NST)grant by the MSIT(Aerospace Semiconductor Strategy Research Project No.GTL25051-000),and the EDA tool was supported by the IC Design Education Center(IDEC),Korea. （Institute for Infor-mation&Communications Technology Planning&Evalua-tion）

半导体学报（英文版）

ISSN：1674-4926

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