舰船电子工程2025，Vol.45Issue(11)：162-164,184,4.DOI:10.3969/j.issn.1672-9730.2025.11.034
高输入功率应力对GaN芯片特性的影响研究
Research on the Influence of High Input Power Stress on the Characteristics of GaN Chips
韩滔 1王宁 1任翔 1常成 1陆涛 1殷鹏毅 1孙佳川1
作者信息
- 1. 航天科工防御技术研究试验中心 北京 100039
- 折叠
摘要
Abstract
The quality and reliability of GaN devices has become a problem of more and more users,and this paper simulates the high input power application scenario of the device,monitors the degradation of GaN devices during the test process,and sum-marizes the degradation mechanism through the analysis of the test results.关键词
高输入功率/氮化镓器件/退化Key words
high input power/GaN devices/degradation分类
信息技术与安全科学引用本文复制引用
韩滔,王宁,任翔,常成,陆涛,殷鹏毅,孙佳川..高输入功率应力对GaN芯片特性的影响研究[J].舰船电子工程,2025,45(11):162-164,184,4.
