深圳大学学报（理工版）2026，Vol.43Issue(1)：1-6,6.DOI:10.3724/SP.J.1249.2026.01001
高结晶取向原子级平整相变异质结薄膜的可控制备
Controllable fabrication of highly crystalline and atomically flat phase-change heterostructure thin films
摘要
Abstract
To optimize the crystalline quality of phase-change heterostructure(PCH)thin films and investigate the effects of different substrates and buffer layers on the growth of Sb2Te3 films,we systematically compared the crystalline properties of Sb2Te3 films deposited on Si,SiO2,and Al2O3 substrates.It was found that introducing W or Ti as a buffer layer significantly influences film growth.In particular,the combination of an Al2O3 substrate with W buffer layer approximately 10 nm-thick was shown to markedly promote the high-quality growth of Sb2Te3 films while preserving their orientation consistency.This approach enabled the successful fabrication of PCH films with near-atomic-level flatness.This study provides important experimental evidence and theoretical support for the preparation of high-performance PCH materials.关键词
相变存储材料/碲化锑/异质结/衬底/缓冲层/薄膜生长Key words
phase change materials/Sb2Te3/heterostructure/substrate/buffer layer/film growth分类
通用工业技术引用本文复制引用
丁科元,钟名鉴,车勇勇,饶峰..高结晶取向原子级平整相变异质结薄膜的可控制备[J].深圳大学学报（理工版）,2026,43(1):1-6,6.基金项目
National Natural Science Foundation of China(52032006,52272159) （52032006,52272159）
Guangdong Basic and Applied Basic Research Foundation(2020B1515120008,2022B1515020072) （2020B1515120008,2022B1515020072）
Project of Department of Education of Guangdong Province(2021ZDZX1006) （2021ZDZX1006）
Science and Technology Foundation of Shenzhen(ZDSYS20210623091813040) （ZDSYS20210623091813040）
Shenzhen University 2035 Program for Excellent Research(00000203)国家自然科学基金资助项目(52032006,52272159) （00000203）
广东省基础与应用基础研究基金资助项目(2020B1515120008,2022B1515020072) （2020B1515120008,2022B1515020072）
广东省教育厅资助项目(2021ZDZX1006) （2021ZDZX1006）
深圳市科技基金资助项目(ZDSYS20210623091813040) （ZDSYS20210623091813040）
深圳大学2035卓越研究计划资助项目(00000203) （00000203）
