物理学报2026，Vol.75Issue(1)：151-171,21.DOI:10.7498/aps.75.20251241
Al1-xScxN铁电薄膜的研究进展
Research progress of Al1-xScxN ferroelectric thin films
摘要
Abstract
Al1-xScxN,as a new generation of wurtzite-type ferroelectric material,has become a focal point in ferroelectric materials research in recent years,due to its high remnant polarization,nearly ideal rectangular polarization-electric field hysteresis loops,inherent compatibility with back-end-of-line(BEOL)CMOS processes,and stable ferroelectric phase structure.The systematic and in-depth studies on the preparation,property modulation,and device applications of this material have been conducted.This paper provides a comprehensive review of the research progress of Al1-xScxN ferroelectric thin films.Regarding the factors influencing ferroelectric properties,it emphasizes the regulatory effects of Sc doping concentration on phase transition and coercive field,explores the influences of substrate(such as Si and Al2O3)and bottom electrode(such as Pt,Mo,and HfN0.4)on thin-film orientation,stress,and interface quality,and systematically summarizes the influences of deposition conditions,film thickness,testing frequency,and temperature on ferroelectric performance.At the level of physical mechanisms governing polarization switching,this review elaborates on the domain structure,domain wall motion dynamics,nucleation sites and growth mechanisms in the Al1-xScxN switching process,revealing its microscopic response behavior under external electric fields and the mechanisms underlying fatigue failure.In terms of application prospects,Al1-xScxN thin films show significant advantages in memory devices such as ferroelectric random-access memory(FeRAM),ferroelectric field-effect transistors(FeFETs),and ferroelectric tunnel junctions(FTJs).Their high performance and integration compatibility provide strong technical support for developing next-generation,high-density,low-power ferroelectric memory and nanoelectronic devices.关键词
Al1-xScxN薄膜/铁电性/电畴翻转机制/铁电存储器Key words
Al1-xScxN film/ferroelectricity/domain reversal mechanism/ferroelectric memory引用本文复制引用
赵泳淞,周大雨,童祎,王新朋,秦海鸣..Al1-xScxN铁电薄膜的研究进展[J].物理学报,2026,75(1):151-171,21.基金项目
国家自然科学基金(批准号:52472120)、中央高校基本科研业务费(批准号:DUT24LAB117)和苏州实验室科研项目(批准号:SK-1202-2024-012)资助的课题. Project supported by the National Natural Science Foundation of China(Grant No.52472120),the Fundamental Research Funds for the Central Universities of China(Grant No.DUT24LAB117),and the Suzhou Laboratory Project,China(Grant No.SK-1202-2024-012). （批准号:52472120）
