首页|期刊导航|计算机科学技术学报（英文版）|SENTRY:Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory
计算机科学技术学报（英文版）2025，Vol.40Issue(6)：1530-1545,16.DOI:10.1007/s11390-024-4251-9
SENTRY:Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory
SENTRY:Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory
摘要
关键词
embedded nonvolatile memory/endurance/wear-leveling/resistive random access memory/magnetic ran-dom access memoryKey words
embedded nonvolatile memory/endurance/wear-leveling/resistive random access memory/magnetic ran-dom access memory引用本文复制引用
郭子龙,常亮,刘健伟,谭海宁,周菁,吴强..SENTRY:Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory[J].计算机科学技术学报（英文版）,2025,40(6):1530-1545,16.基金项目
This work was supported by the National Natural Science Foundation of China under Grant No.62104025,and in part by the State Key Laboratory of Computer Architecture under Grant Nos.CARCHB202117 and CLQ202305. （）
