聊城大学学报（自然科学版）2026，Vol.39Issue(2)：249-254,6.DOI:10.19728/j.issn1672-6634.2025100010
应力释放对InGaN/GaN量子阱有源区发光特性的影响机制
Mechanism of strain relaxation effects upon luminescence characteristics of InGaN/GaN quantum well active regions
摘要
Abstract
Two different green-emitting InGaN/GaN quantum well(QW)structures,with and without a strain-relieving layer,were prepared,and their injection current-dependence of electroluminescence(EL)and temperature dependence of photoluminescence(PL)were investigated.The EL measurements indica-ted that,comparing with the QW structure without a strain-relieving layer(S1),the QW structure with a strain-relieving layer(S2)exhibits a stronger EL intensity,a significant energy redshift,and a smaller ef-ficiency droop.In contrast,the PL measurements indicated that S2 has fewer non-radiative centers,a lar-ger activation energy,and a higher internal quantum efficiency than S1.These results reflected the fact that the introduction of the strain-relieving layer not only relieves the stress in the active region and en-hances the incorporation of Indium atoms,but also improves the structural quality of the active region,strengthens the carrier localization effect,and suppresses electron leakage.Such explanation is consistent with the high-resolution X-ray diffraction measurements,which have shown that S2 has a less dislocation density and better structural/crystalline quality than S1.关键词
InGaN/GaN量子阱/应力释放层/电致发光/光致发光/效率下垂/内量子效率Key words
InGaN/GaN quantum well/strain-relieving layer/electroluminescence/photoluminescence/efficiency droop/internal quantum efficiency分类
通用工业技术引用本文复制引用
郭一庸,武智波,徐昊一,李长富,高渊,冀子武..应力释放对InGaN/GaN量子阱有源区发光特性的影响机制[J].聊城大学学报（自然科学版）,2026,39(2):249-254,6.基金项目
国家自然科学基金项目(52272157,51872167)资助 （52272157,51872167）
