液晶与显示2026，Vol.41Issue(1)：120-141,22.DOI:10.37188/CJLCD.2025-0194
基于界面修饰层制备高性能量子点发光二极管的研究进展
Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers
摘要
Abstract
As a carrier of visual information,displays play an indispensable role in an increasingly digital and intelligent life.Quantum dot light-emitting diodes(QLEDs)are poised to lead the next generation of display technology with their outstanding performance,and are expected to reshape the international display panel market landscape.However,the practical application of QLED devices are still subject to some constraints,for example,the luminous performance and lifetime have not yet met the requirements for commercial application.In order to prepare high-performance QLEDs,it is a common method to modify the interface of each functional layer.Based on this,the review summarizes the research progress of QLEDs interface modification from many aspects,and analyses in detail the mechanism of interface modification and its effect on the performance of QLEDs.Finally,the shortcomings in the development of QLEDs are pointed out,and the future development directions of QLEDs are proposed.This review is expected to provide valuable reference for the academic research and industrialization of QLEDs.关键词
量子点发光二极管/界面修饰/功能层/性能Key words
quantum dot light emitting diode/interface modification/functional layer/performance分类
信息技术与安全科学引用本文复制引用
罗承宇,钟超,陈佳蕾,林立华,胡海龙,李福山..基于界面修饰层制备高性能量子点发光二极管的研究进展[J].液晶与显示,2026,41(1):120-141,22.基金项目
国家自然科学基金(No.52572156) Supported by National Natural Science Foundation of China(No.52572156) （No.52572156）
