液晶与显示2026，Vol.41Issue(1)：142-149,8.DOI:10.37188/CJLCD.2025-0219
PFI引入PEDOT∶PSS空穴注入层提升Cu-In-Zn-S基量子点发光二极管性能
PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes
摘要
Abstract
Electron-hole injection imbalance caused by slow hole injection is one of the major factors limiting the performance improvement of multinary copper chalcogenide quantum dot light-emitting diodes(QLEDs).This study designed a strategy to modify poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT∶PSS)using a nafion perfluorinated resin(PFI).Taking advantage of the self-assembly property of PFI,a hole injection layer(PFI-PEDOT∶PSS)with a gradient energy level was constructed.Single hole-transporting devices further demonstrate that the PFI-PEDOT∶PSS hole injection layer can effectively reduce the hole injection barrier and enhance hole injection efficiency,thereby improving device performance.Finally,the peak external quantum efficiency of the electroluminescent devices fabricated with PFI-PEDOT∶PSS as the hole injection layer and Cu-In-Zn-S quantum dots as the emitting layer reached 4.7%,which was 2.2 times that of the PEDOT∶PSS-based devices.The results indicate that this modification strategy of incorporating PFI into the PEDOT∶PSS hole injection layer can effectively enhance the performance of Cu-In-Zn-S-based QLEDs,and also lays an important research foundation for the subsequent industrial application of environmentally friendly QLEDs.关键词
Cu-In-Zn-S量子点/发光二极管/PEDOT∶PSS/全氟化树脂Key words
Cu-In-Zn-S quantum dot/light-emitting diodes/PEDOT∶PSS/nafion perfluorinated resin分类
信息技术与安全科学引用本文复制引用
刘柄含,赵金星,刘子奕,解修林,郑龙雪,吴静可,蔡炆澈,李旭,唐爱伟..PFI引入PEDOT∶PSS空穴注入层提升Cu-In-Zn-S基量子点发光二极管性能[J].液晶与显示,2026,41(1):142-149,8.基金项目
河北省高等学校科学技术研究项目(No.CXY2024019) Supported by Scientific and Technological Research Projects for Colleges and Universities in Hebei Province(No.CXY2024019) （No.CXY2024019）
