Journal of Materiomics2025，Vol.11Issue(6)：P.313-315,3.DOI:10.1016/j.jmat.2025.101125
HfO_(2)-based thin filmsand devices
Xiaoguang Li 1Min Hyuk Park 2Ji-Yan Dai 3Yuewei Yin1
作者信息
- 1. Hefei National Research Center for Physical Sciences at the Microscale,Department of Physics,University of Science and Technology of China,Hefei,230026,China
- 2. Department of Materials Science and Engineering&Inter-university Semiconductor Research Center,College of Engineering,Seoul National University,Seoul,08826,Republic of Korea
- 3. Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China
- 折叠
摘要
关键词
cmos processing/integrated circuits/high dielectric constant/hfo based thin films/wide bandgap/high k gate dielectric/thermal stability/ferroelectricity分类
通用工业技术引用本文复制引用
Xiaoguang Li,Min Hyuk Park,Ji-Yan Dai,Yuewei Yin..HfO_(2)-based thin filmsand devices[J].Journal of Materiomics,2025,11(6):P.313-315,3.
