首页|期刊导航|Journal of Materiomics|Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_(0.5)Zr_(0.5)O_(2)thin films
Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_(0.5)Zr_(0.5)O_(2)thin films
Seong Jae Shin Hani Kim Seungyong Byun Jonghoon Shin Jinwoo Choi Suk Hyun Lee Kyung Do Kim Jae Hee Song Dong Hoon Shin Soo Hyung Lee In Soo Lee Hyunwoo Nam Cheol Seong Hwang
Journal of Materiomics2025,Vol.11Issue(6):P.235-244,10.
Journal of Materiomics2025,Vol.11Issue(6):P.235-244,10.DOI:10.1016/j.jmat.2025.101101
Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_(0.5)Zr_(0.5)O_(2)thin films
摘要
关键词
Ferroelectric Hf_(0.5)Zr_(0.5)O_(2)/Atomic layer deposition/CP-Linked precursor/Deposition temperature/In-situ crystallization/Film thickness/In-plane strain分类
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Seong Jae Shin,Hani Kim,Seungyong Byun,Jonghoon Shin,Jinwoo Choi,Suk Hyun Lee,Kyung Do Kim,Jae Hee Song,Dong Hoon Shin,Soo Hyung Lee,In Soo Lee,Hyunwoo Nam,Cheol Seong Hwang..Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_(0.5)Zr_(0.5)O_(2)thin films[J].Journal of Materiomics,2025,11(6):P.235-244,10.基金项目
supported by SK hynix Inc.under its Center of Material Research for Semiconductors(C-MRS)program. (C-MRS)