电源技术2026，Vol.50Issue(1)：154-159,6.DOI:10.3969/j.issn.1002-087X.2026.01.019
GaAs太阳电池带隙结构仿真研究
Simulation research on bandgap structure of GaAs solar cells
摘要
Abstract
Ⅲ-Ⅴ solar cells,typified by GaAs solar cells,exhibits excellent photovoltaic properties and hold significant application value in space platforms such as satellites.However,current Ⅲ-Ⅴ solar cells face challenges including high production costs and performance degradation under space radia-tion.This work investigates incorporating Al into GaAs to form AlGaAs with a deliberately engi-neered compositional gradient by varying Al/Ga ratio,thereby establishing a graded bandgap to en-hance photovoltaic performance.Numerical simulations indicate that,across reduced minority-carrier lifetime,the graded-bandgap architecture mitigates performance losses.In particular,it sub-stantially enhances the collection of photo-generated electrons originating from long-wavelength ab-sorption,thereby alleviating the short circuit current density penalty.These results highlight the sig-nificance of bandgap grading for improving the performance of low-quality GaAs cells and for strengthening the radiation resistance of Ⅲ-Ⅴ multijunction solar cells.关键词
GaAs太阳电池/带隙/仿真Key words
GaAs solar cells/bandgap/simulation分类
信息技术与安全科学引用本文复制引用
姚立勇,李建军..GaAs太阳电池带隙结构仿真研究[J].电源技术,2026,50(1):154-159,6.基金项目
国家自然科学基金项目(52472175) （52472175）
中国科学院金属研究所自主部署项目(E455L505) （E455L505）
