福州大学学报（自然科学版）2026，Vol.54Issue(1)：18-24,7.DOI:10.7631/issn.1000-2243.25007
WSe2/MoSe2横向异质结中的自旋相关光电流特性
Spin dependent photocurrent characteristics in WSe2/MoSe2 lateral heterojunction
摘要
Abstract
WSe2/MoSe2 lateral heterojunction was fabricated via chemical vapor deposition.Its helicity dependent photocurrent and linear polarization dependent photocurrent characteristics were systemati-cally investigated using a 1 064 nm laser.Experimental results indicate that the helicity dependent photocurrent exhibits an odd-symmetric trend with varying incidence angles,likely due to the reduced symmetry of the lateral heterojunction corresponding to the C3v point group.The dependence of the linear polarization dependent photocurrent amplitude L1 and L2 on the incidence angle is analyzed.L1 may originate from the combined effects of linear photogalvanic effect and surface photogalvanic effect,while L2 is mainly derived from linear photon drag effect.Further investigation reveals that the helicity dependent photocurrent in the WSe2/MoSe2 lateral heterojunction is influenced by charge transfer effects within the heterojunction and is strongly correlated with differences in electron relaxation time and conduction band curvature between WSe2 and MoSe2.关键词
WSe2/MoSe2横向异质结/化学气相沉积法/圆偏振相关光电流/线偏振相关光电流Key words
WSe2/MoSe2 lateral heterojunction/chemical vapor deposition/helicity dependent photo-current/linear polarization dependent photocurrent分类
数理科学引用本文复制引用
许荣智,周宇超,俞金玲..WSe2/MoSe2横向异质结中的自旋相关光电流特性[J].福州大学学报（自然科学版）,2026,54(1):18-24,7.基金项目
国家自然科学基金资助项目(62074036) （62074036）
福建省科技厅对外合作资助项目(2023I0005) （2023I0005）
