科技创新与应用2026，Vol.16Issue(4)：49-52,57,5.DOI:10.19981/j.CN23-1581/G3.2026.04.011
一种新型4H-SiC MOSFET器件设计与研究
摘要
Abstract
In this paper,a high-temperature stable 4H-SiC MOSFET device is designed and simulated using Sentaurus TCAD software.The relationship between gate oxide thickness,threshold voltage and temperature,and the most suitable doping concentration in each part of the device are discussed.The device was then prepared and its DC temperature characteristics were analyzed.The data matched the simulation results.It can withstand high temperatures of 525℃,and the relevant data reached the international advanced level.关键词
集成电路/场效应管/碳化硅/高温/仿真研究Key words
integrated circuits/field effect transistor/silicon carbide/high temperature/simulation study分类
信息技术与安全科学引用本文复制引用
刘翔宇,唐明旦,王申,王祥太,陈佩莹..一种新型4H-SiC MOSFET器件设计与研究[J].科技创新与应用,2026,16(4):49-52,57,5.基金项目
广东松山职业技术学院校级科研项目(2024KJYB07) （2024KJYB07）
