人工晶体学报2026，Vol.55Issue(1)：52-57,6.DOI:10.16553/j.cnki.issn1000-985x.2025.0159
垂直布里奇曼法生长4英寸Fe掺杂(010)β-氧化镓及其性能表征
Growth and Properties of 4-Inch Fe Doped(010)β-Gallium Oxide Using Vertical Bridgman Method
摘要
Abstract
In this study,a self-built vertical Bridgman(VB)system was utilized to grow large-size,high-quality Fe-doped β-Ga2O3 single crystals.Through iterative thermal field optimization via simulation,slightly convex solid-liquid interface and appropriate temperature gradient were achieved.The as-grown crystal was further processed into a high-quality 4-inch(010)oriented semi-insulating substrate.Comprehensive evaluations of crystallinity,surface morphology,and electrical properties were carried out.The substrate exhibits no macroscopic defects such as cracks.Multi-point X-ray rocking curve measurements show full width at half maximum(FWHM)values all below 50″,indicating superior crystalline quality.Surface topography tests reveal a maximum roughness of 0.074 nm,local thickness variation(LTV)below 3.4 µm,total thickness variation(TTV)of 4.157 µm,warp of 5.886 µm,and bow of 1.103 µm,demonstrating excellent processing quality.Moreover,the substrate displays high average resistivity of approximately 7.9×1010 Ω·cm with an in-plane inhomogeneity of about 7.77%,underscoring the effectiveness of VB method in achieving uniform doping distribution and its potential for radio frequency(RF)and microwave device applications.关键词
氧化镓/宽禁带半导体/晶体生长/垂直布里奇曼/单晶衬底/掺杂Key words
Ga2O3/wide-bandgap semiconductor/crystal growth/vertical Bridgman/single crystal substrate/doping分类
数理科学引用本文复制引用
李明,叶浩函,王琤,沈典宇,王芸霞,王嘉君,夏宁,张辉,杨德仁..垂直布里奇曼法生长4英寸Fe掺杂(010)β-氧化镓及其性能表征[J].人工晶体学报,2026,55(1):52-57,6.基金项目
浙江省"尖兵""领雁"研发攻关计划(2023C01193) （2023C01193）
国家重点研发计划(2024YFE0205300) （2024YFE0205300）
