人工晶体学报2026，Vol.55Issue(1)：68-76,9.DOI:10.16553/j.cnki.issn1000-985x.2025.0133
热屏结构对直径400 mm直拉单晶硅生长的影响
Effect of Thermal Shield Structure on the Growth of 400 mm Diameter Czochralski Monocrystalline Silicon
摘要
Abstract
Monocrystalline silicon is one of the key materials for the preparation of semiconductors.Driven by the need to reduce costs,large diameter and fast crystal pulling technology is one of the development trends in the preparation of monocrystalline silicon by Czochralski method.In this paper,a double thermal shield structure was proposed,and the effects of the double thermal shield structure on the temperature and gas flow fields,the melt-crystal interface,the growth rate of monocrystalline silicon,thermal stresses,and point defects during the growth of monocrystalline silicon were analyzed.The results demonstrate that the double thermal shield structure can guide the flow of argon gas near the solid-liquid interface,suppress vortex formation on the outer side of the thermal shield,enhance heat dissipation from the crystal,and consequently increase its growth rate,with a maximum improvement of 19.2%.At the same time,the double thermal shield structure also improves the melt-crystal interface fluctuation,and the maximum thermal stress is reduced by 4.266 MPa compared with the single thermal shield structure.Therefore,the double thermal shield structure has a better application prospect.关键词
直拉单晶硅/热屏结构/生长速度/固液界面/热应力/点缺陷Key words
Czochralski monocrystalline silicon/thermal shield structure/growth rate/melt-crystal interface/thermal stress/point defect分类
数理科学引用本文复制引用
艾进才,杨平平,赵紫薇,高忙忙..热屏结构对直径400 mm直拉单晶硅生长的影响[J].人工晶体学报,2026,55(1):68-76,9.基金项目
国家自然科学基金(52164047) （52164047）
中国科学院"西部之光"人才培养计划(XAB2022YW10) （XAB2022YW10）
银川市创新联合体组建引导专项(2022CXLHT001) （2022CXLHT001）
