无机材料学报2026，Vol.41Issue(1)：1-11,11.DOI:10.15541/jim20250081
3C-SiC晶体制备研究进展
Recent Progress on Preparation of 3C-SiC Single Crystal
摘要
Abstract
Silicon carbide(SiC),as a representative wide bandgap semiconductor material,has increasingly demonstrated its significance in high-power,high-frequency and high-temperature electronic device applications.In recent years,SiC semiconductors have become primary material for power devices in electric drive modules and charging modules of new energy vehicles.Compared to Si-based insulated gate bipolar transistors(IGBTs),a kind of minority carrier device,SiC materials enable high-voltage resistance through majority carrier devices(such as Schottky barrier diodes and metal-oxide-semiconductor field-effect transistors(MOSFETs))with high-frequency device structures,which conversely allows SiC to simultaneously achieve key characteristics of low on-resistance and high frequency.It is easy to deduce that,SiC will also play an indispensable role in emerging fields such as electric aircrafts,electric vertical take-off and landing(eVTOL)vehicles for low-altitude transportation,augmented reality(AR),photovoltaic inverters,and rail transportation.Among various SiC polytypes,3C-SiC stands out due to its unique cubic crystal structure,higher thermal conductivity(500 W/(m·K))and channel mobility(approximately 300 cm2/(V·s)),showcasing significant application potential and research value.This paper provides an overview of the crystal structure,fundamental physical properties,application advantages,and major growth methods of 3C-SiC,including chemical vapor deposition(CVD),continuous-feed physical vapor transport(CF-PVT),sublimation epitaxy(SE),and top-seeded solution growth(TSSG).Research progress and the latest achievements in 3C-SiC crystal growth using above techniques are reviewed,focusing on the thermodynamic characteristics and growth mechanisms of vapor-phase and liquid-phase methods.The microscopic processes of crystal growth are analyzed and summarized,and the future development directions and application prospects for 3C-SiC crystals are discussed.关键词
宽禁带半导体/3C-SiC晶体/晶体生长/微观机理/综述Key words
wide bandgap semiconductor/3C-SiC single crystal/crystal growth/micro-mechanism/review分类
化学化工引用本文复制引用
徐锦涛,高攀,何唯一,蒋圣楠,潘秀红,汤美波,陈锟,刘学超..3C-SiC晶体制备研究进展[J].无机材料学报,2026,41(1):1-11,11.基金项目
国家重点研发计划(2021YFA0716304) （2021YFA0716304）
中国载人航天工程空间应用系统项目(GC-CL-2024-003)National Key Research and Development Program of China(2021YFA0716304) （GC-CL-2024-003）
Space Application System of China Manned Space Program(GC-CL-2024-003) （GC-CL-2024-003）
