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Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2 passivation

Tingrui Huang Wangran Wu Jie Cao Zuoxu Yu Yuzhen Zhang Wenting Xu Xifeng Li Cong Peng Weifeng Sun Guangan Yang

半导体学报（英文版）2026，Vol.47Issue(2)：14-21,8.

半导体学报（英文版）2026，Vol.47Issue(2)：14-21,8.DOI:10.1088/1674-4926/25050023

Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2 passivation

Tingrui Huang ¹Wangran Wu ¹Jie Cao ¹Zuoxu Yu ¹Yuzhen Zhang ¹Wenting Xu ¹Xifeng Li ²Cong Peng ²Weifeng Sun ¹Guangan Yang³

作者信息

1. School of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
2. Key Laboratory of Advanced Display and System Applications of the Ministry of Education,Shanghai University,Shanghai 200072,China
3. School of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
折叠

摘要

关键词

thin film transistor/reliability/InSnO/SiO2

Key words

thin film transistor/reliability/InSnO/SiO2

引用本文复制引用

Tingrui Huang,Wangran Wu,Jie Cao,Zuoxu Yu,Yuzhen Zhang,Wenting Xu,Xifeng Li,Cong Peng,Weifeng Sun,Guangan Yang..Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2 passivation[J].半导体学报（英文版）,2026,47(2):14-21,8.

基金项目

The work is supported in part by the National Natural Sci-ence Foundation of China(62404110,62274033),Natural Sci-ence Foundation of Jiangsu Province(BK20221453),Fundamen-tal Research Funds for the Central Universities,and Natural Sci-ence Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159). （62404110,62274033）

半导体学报（英文版）

ISSN：1674-4926

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