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首页|期刊导航|半导体学报（英文版）|Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contacts

Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contacts

Jianggen Zhu Qi Zhou Jiaren Feng Shuting Huang Ning Yang Binju Qiu Enchuan Duan Sheng Liu Bo Zhang Zhaofu Zhang

半导体学报（英文版）2026，Vol.47Issue(2)：22-31,10.
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半导体学报（英文版）2026，Vol.47Issue(2)：22-31,10.DOI:10.1088/1674-4926/25050020

Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contacts

Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contacts

Jianggen Zhu 1Qi Zhou 2Jiaren Feng 3Shuting Huang 1Ning Yang 1Binju Qiu 1Enchuan Duan 1Sheng Liu 3Bo Zhang 1Zhaofu Zhang4

作者信息

  • 1. School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China(UESTC),Chengdu 610054,China
  • 2. School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China(UESTC),Chengdu 610054,China||Shenzhen Institute for Advanced Study,UESTC,Shenzhen 518110,China||Institute of Electronic and Information Engineering,UESTC,Dongguan 523808,China
  • 3. School of Integrated Circuits,Wuhan University,Wuhan 430072,China
  • 4. School of Integrated Circuits,Wuhan University,Wuhan 430072,China||Suzhou Institute of Wuhan University,Suzhou 215123,China||Research Institute of Wuhan University in Shenzhen,Shenzhen 518057,China
  • 折叠

摘要

关键词

Ni/β-Ga2O3 interface/first-principles calculations/Schottky contact/fluorine plasma/electrothermal annealing

Key words

Ni/β-Ga2O3 interface/first-principles calculations/Schottky contact/fluorine plasma/electrothermal annealing

引用本文复制引用

Jianggen Zhu,Qi Zhou,Jiaren Feng,Shuting Huang,Ning Yang,Binju Qiu,Enchuan Duan,Sheng Liu,Bo Zhang,Zhaofu Zhang..Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contacts[J].半导体学报（英文版）,2026,47(2):22-31,10.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(Grant Nos.62174019,52302046,L2424216),the Guangdong Basic and Applied Basic Research Foundation(Grant No.2024A1515012139),the Major Pro-gram(JD)of Hubei Province(Grant No.2023BAA009),the Knowledge Innovation Program of Wuhan-Shuguang Project(Grant No.2023010201020262),the Basic Research Program of Jiangsu(Grant No.BK20230268). （Grant Nos.62174019,52302046,L2424216）

半导体学报（英文版）

1674-4926

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