首页|期刊导航|半导体学报（英文版）|Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing

Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing

Fakhari Alam Sara Ajmal Muhammad Asim Shahzad Ghulam Dastgeer Aamir Rasheed Gang He

半导体学报（英文版）2026，Vol.47Issue(2)：60-71,12.

半导体学报（英文版）2026，Vol.47Issue(2)：60-71,12.DOI:10.1088/1674-4926/25030033

Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing

Fakhari Alam ¹Sara Ajmal ²Muhammad Asim Shahzad ³Ghulam Dastgeer ⁴Aamir Rasheed ²Gang He⁵

作者信息

1. School of Materials Science and Engineering,Anhui University,Hefei 230601,China||Department of Chemistry,Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials,Anhui Univer-sity,Hefei 230601,China
2. School of Materials Science and Engineering,Anhui University,Hefei 230601,China||Department of Chemistry,University of Ulsan,Ulsan 44610,South Korea
3. Department of Physics,University of Sahiwal,Sahiwal-57000,Pakistan
4. Department of Physics and Astronomy,Sejong University,Seoul 05006,South Korea
5. School of Materials Science and Engineering,Anhui University,Hefei 230601,China
折叠

摘要

关键词

thin-film transistors/Ni-doped In2O3/solution processing/bias illumination stability

Key words

thin-film transistors/Ni-doped In2O3/solution processing/bias illumination stability

引用本文复制引用

Fakhari Alam,Sara Ajmal,Muhammad Asim Shahzad,Ghulam Dastgeer,Aamir Rasheed,Gang He..Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing[J].半导体学报（英文版）,2026,47(2):60-71,12.

基金项目

This research is funded by the research startup funding of National Research Foundation(NRF)of Korea through the Ministry of Science and ICT 2022R1G1A1009887.Part of this study was supported by research start-up funding of Anhui University(S202418001/078). （NRF）

半导体学报（英文版）

ISSN：1674-4926

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