半导体学报（英文版）2026，Vol.47Issue(2)：79-86,8.DOI:10.1088/1674-4926/25100017
8-inch free-standing GaN substrates grown by hydride vapor phase epitaxy
8-inch free-standing GaN substrates grown by hydride vapor phase epitaxy
Ruihua Zhang 1Jiejun Wu 2Tongjun Yu 2Qi Wang 3Jingquan Lu 1Guoyi Zhang 4Xinqiang Wang 5Fang Liu 2Yao Wu 1Hongfen Xu 1Jinmi He 1Ming Liu 1Jianhui Wang 1Kunyang Li 2Ping Wang2
作者信息
- 1. Sino Nitride Semiconductor Co.Ltd.,Dongguan 523518,China
- 2. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China
- 3. Dongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,China
- 4. Sino Nitride Semiconductor Co.Ltd.,Dongguan 523518,China||State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China||Dongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,China
- 5. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China||Dongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,China
- 折叠
摘要
关键词
gallium nitride/single-crystal substrates/large size/hydride vapor phase epitaxyKey words
gallium nitride/single-crystal substrates/large size/hydride vapor phase epitaxy引用本文复制引用
Ruihua Zhang,Jiejun Wu,Tongjun Yu,Qi Wang,Jingquan Lu,Guoyi Zhang,Xinqiang Wang,Fang Liu,Yao Wu,Hongfen Xu,Jinmi He,Ming Liu,Jianhui Wang,Kunyang Li,Ping Wang..8-inch free-standing GaN substrates grown by hydride vapor phase epitaxy[J].半导体学报（英文版）,2026,47(2):79-86,8.基金项目
This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605203 and 2022YFB3608100)and the National Natural Science Foun-dation of China(Nos.62321004,62227817,and 62374001). （Nos.2022YFB3605203 and 2022YFB3608100）
