电子学报2025，Vol.53Issue(10)：3497-3503,7.DOI:10.12263/DZXB.20250526
基于InP HEMT工艺的低噪声放大器模块气密性封装
Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology
摘要
Abstract
This paper presents the design and implementation of a low-insertion-loss,hermetic low-noise amplifier(LNA)module based on an indium phosphide high-electron-mobility transistor(InP HEMT)chip.To address the vulnerabil-ity of traditional E-plane probe waveguide packaging structures to moisture during environmental testing,a hermetic verti-cal waveguide-to-microstrip transition structure is proposed,enhancing the reliability of the amplifier module in harsh condi-tions.Furthermore,by introducing a periodic gap waveguide structure around the waveguide short-circuit region,energy leakage and higher-order mode resonance in the quartz substrate are effectively suppressed.Simulation results demonstrate that the proposed transition structure achieves a return loss better than-25 dB and an insertion loss below 0.3 dB across 87.5～90.5 GHz.Through compensation for the parasitic inductance introduced by bonding wires,the in-band return perfor-mance is improved from-15 dB to-25 dB,reducing energy reflection during transmission.Measured results indicate a gain greater than 20 dB,an input return loss below-20 dB,a typical noise figure of 2.5 dB,and a total loss induced by the bilat-eral packaging of less than 1 dB within the operating band.The overall performance shows good agreement with the chip datasheet,validating the effectiveness of the proposed design.关键词
气密性/低噪声放大器/间隙波导/低损耗封装/毫米波Key words
hermeticity/low-noise amplifier/gap waveguide/low-loss packaging/millimeter wave分类
信息技术与安全科学引用本文复制引用
邓世河,张盟,沈亚飞,谢振超,王文伟..基于InP HEMT工艺的低噪声放大器模块气密性封装[J].电子学报,2025,53(10):3497-3503,7.基金项目
国家重点研发计划(No.2023YFB3905604) National Key Research and Development Program(No.2023YFB3905604) （No.2023YFB3905604）
